Methods of semiconductor Processing

ABSTRACT

The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

TECHNICAL FIELD

[0001] The present invention relates to electronic device workpieces,methods of semiconductor processing and methods of sensing temperatureof an electronic device workpiece.

BACKGROUND OF THE INVENTION

[0002] It is preferred in the semiconductor and related arts to utilizelarge wafers for fabrication of integrated circuits and other devices.Large wafers are preferred inasmuch as an increased number of chips canbe fabricated from larger workpieces. As the size of the waferscontinues to increase as processing techniques are improved, additionalprocessing obstacles are presented.

[0003] For example, it is typically preferred to provide a substantiallyconstant temperature across the surface of the wafers being processedbecause changes in temperature can influence device fabrication. Wafersof increased diameters and surface areas experience increasedtemperature fluctuations at various locations on the workpiece. Inparticular, a partial vacuum is typically used to pull small diameterwafers into direct thermal contact with a hot plate. Such processingmethods facilitate substrate temperature control because the substratetemperature is closely associated to the temperature of the hot plate.Fabrication of small sub-micron devices upon larger diametersemiconductor wafers or workpieces requires minimal backsidecontamination. As such, contact of the workpiece with a hot plate is nottypically not possible. Such workpieces are processed in conventionaloperations upon spacers or pins that position the workpieceapproximately 0.1 millimeters above the hot plate heating surface. Suchspacing intermediate a chuck or hot plate and the workpiece results insubstrate temperatures which can be influenced by the environment abovethe substrate. Inconsistencies in temperature across the surface of theworkpiece often result.

[0004] Absolute temperature and temperature uniformity of a workpieceare parameters which are closely monitored during wafer and workpiecefabrication to provide critical dimension (CD) control. Chemicallyamplified resists are utilized in deep ultraviolet (DUV) lithography insmall micron geometries (eg., 0.25 microns and below). Chemicallyamplified resists are particularly temperature dependent furtherincreasing the importance of temperature control and monitoring. Somethermal resist processing steps require process windows ranging from 1-2degrees centigrade down to a few tenths of a degree centigrade.Meteorology that is four to ten times more precise than conventionalprocess equipment may be required to provide thermal performancemeasurements to 0.1 degrees centigrade.

[0005] One approach has disclosed the use of temperature sensors acrossa surface of the wafer to provide temperature mapping of the workpieceduring processing. Platinum foil leads and copper leads are utilized toelectrically connect the temperature sensors. With the use of numeroustemperatures sensors across an entire workpiece surface, numerous wiresare required for coupling and monitoring. Such numerous wiredconnections can break and/or adversely impact processing of theworkpiece or the temperature measurements taken of the surface of theworkpiece. Some temperature sensors require four leads per sensorfurther impacting the processing and temperature monitoring of theworkpieces.

[0006] Therefore, there exists a need to provide improved temperaturemonitoring of workpieces which overcomes the problems experienced in theprior art.

SUMMARY OF THE INVENTION

[0007] The present invention includes electronic device workpieces,methods of semiconductor processing and methods of sensing temperatureof an electronic device workpiece. Exemplary electronic deviceworkpieces include semiconductor wafers.

[0008] One electronic device workpiece includes a substrate having anupper surface and a temperature sensing device borne by the substrate.The temperature sensing device can comprise a preexisting device.Alternatively, the temperature sensing device can be formed upon asurface of the electronic device workpiece. The temperature sensingdevice comprises a resistance temperature device (RTD) in oneembodiment. A plurality of temperature sensing devices are provided intemperature sensing relation with the electronic device workpiece in anexemplary embodiment.

[0009] An electrical interconnect is preferably provided upon thesurface of the substrate. The electrical interconnect comprises aconductive trace in a preferred embodiment. The electrical interconnectis electrically coupled with the temperature sensing device. Theelectrical interconnect can be wire bonded to or physically coupled withthe temperature sensing device. The electrical interconnect can beconfigured to couple the temperature sensing device with an edge of theelectronic device workpiece. An interface can be provided to couple theelectrical interconnects with external circuitry. Exemplary electricalcircuitry includes a data gathering device, such as a digital computer.

[0010] An isolator is formed intermediate the temperature sensing deviceand electrical interconnect, and the substrate of the electronic deviceworkpiece in one embodiment. The isolator provides electrical isolation.An exemplary isolator comprises silicon dioxide.

[0011] Temperature sensing devices are provided within a cavity formedwithin the substrate of the electronic device workpieces according toanother embodiment. The cavity is preferably formed by an anisotropicetch forming sidewalls at an approximate angle of fifty-four degreeswith respect to the surface of the substrate. Alternatively, temperaturesensing devices are formed or positioned upon a surface of theelectronic device workpiece.

[0012] The electronic device workpiece comprises a calibration workpiecein one embodiment. In another embodiment, the electronic deviceworkpiece comprises a workpiece which undergoes processing from whichsubsequent devices are formed, such as a silicon wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0014]FIG. 1 is an isometric view of an electronic device workpiecehaving a plurality of temperature sensing devices.

[0015]FIG. 1A is an isometric view of an alternative electronic deviceworkpiece.

[0016]FIG. 1B is a cross-sectional view of one configuration of aninterface of the electronic device workpiece.

[0017]FIG. 2 is a cross-sectional view of a first embodiment of atemperature sensing device upon the electronic device workpiece.

[0018]FIG. 2A is a cross-sectional view of an alternative configurationof an electrical connection coupled with the temperature sensing deviceshown in FIG. 2.

[0019]FIG. 3 is a cross-sectional view of a second embodiment of atemperature sensing device upon the electronic device workpiece.

[0020]FIG. 4 is an elevated plan view of the temperature sensing deviceshown in FIG. 3.

[0021]FIG. 5 is a cross-sectional view of a temperature sensing deviceprovided upon an upper surface of the electronic device workpiece.

[0022]FIG. 6 is a cross-sectional view illustrating an electricalconnection coupled with a temperature sensing device upon the electronicdevice workpiece.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0024] Referring to FIG. 1, an electronic workpiece 10 is illustrated.Exemplary electronic device workpieces include a semiconductor wafer ora crystal mask substrate. In one embodiment, electronic device workpiece10 includes a substrate 11 comprising a semiconductive substrate.Substrate 11 can comprise silicon, silicon carbide and gallium nitride.Alternatively, electronic device workpiece 10 can comprise othersubstrates. In particular, electronic device workpiece 10 can compriseother components configured for application within an electronic orelectrical device or configured for processing to form such components.

[0025] Electronic device workpiece 10 is coupled with external circuitry12. The illustrated external circuitry 12 includes plural connections 14and a resistance thermometer 16. An interface 18 is provided in apreferred embodiment to provide convenient coupling of circuitry formedupon electronic device workpiece 10 and electrical connections 14 ofcircuitry 12.

[0026] External circuitry 12 can be implemented in other configurations.For example, resistance thermometer 16 comprises a data gathering devicein alternative embodiments. Connections 14 are configured to coupleelectronic device workpiece 10 with a digital computer configured tomonitor process conditions including the temperature of electronicdevice workpiece 10. External circuitry 12 includes communicationdevices in other embodiments of the invention to transmit processconditions.

[0027] Electronic device workpiece 10 includes an upper surface 20 andlower surface 22 opposite upper surface 20. Electronic device workpiece10 additionally includes an edge 24 which is circular in the describedembodiment.

[0028] According to the present invention, at least one temperaturesensing device 30 is provided upon at least one surface of electronicdevice workpiece 10. A plurality of temperature sensing devices 30 areprovided upon electronic device workpiece 10 in a preferred embodiment.In the illustrated embodiment, a plurality of temperature sensingdevices 30 are provided upon or supported by upper surface 20 ofelectronic device workpiece 10. Temperature sensing devices 30 arepreferably borne by substrate 11 of electronic device workpiece 10 andmay be formed upon lower surface 22 as well as upper surface 20.

[0029] In one embodiment, temperature sensing devices 30 compriseresistance temperature devices (RTD). Resistance temperature devicesprovide contact temperature sensing in preferred modes of operation. Inparticular, resistance temperature devices can comprise a wire wounddevice that provides a linear resistance change for a correspondingtemperature change. Typically, the coefficient of temperature ofresistance temperature devices is positive wherein the resistancethrough the resistance temperature device increases as temperatureincreases.

[0030] Exemplary resistance temperature devices comprise sensitivematerials which provide a plurality of resistances corresponding to atemperature profile. Resistance temperature devices can compriseplatinum, polysilicon or other sensitive materials.

[0031] In another embodiment, temperature sensing devices 30 comprisediodes which provide a change in threshold voltage responsive totemperature changes. Such voltage changes are sufficient to enablemonitoring of associated temperatures and extraction of temperatureinformation. Other temperature sensing devices 30 comprise thermocoupleswhich comprise two overlapping dissimilar metals to create a voltageproducing junction which varies dependent upon temperature exposure.Further temperature sensing devices 30 include a thermistor whichcomprises a mixture of metal oxides and encapsulated in an isolator suchas epoxy or glass.

[0032] As described in detail below, temperature sensing devices 30 canbe fabricated or formed upon the electronic device workpiece 10 orcomprise preexisting devices which are positioned and adhered upon orattached to the electronic device workpiece 10. Fabricated temperaturesensing devices 30 are available from Watlow Electrical ManufacturingCompany of St. Louis, Mo.

[0033] Electrical interconnects 40, 41 are provided to electricallycouple with individual temperature sensing devices 30. In a preferredembodiment, electrical interconnects 40, 41 are formed upon uppersurface 20 of substrate 11. In embodiments where plural temperaturesensing devices 30 are provided, individual electrical interconnects 40,41 are individually coupled with respective temperature sensing devices30. Electrical interconnects 40, 41 are formed upon upper surface 20 ofsubstrate 11 in one embodiment. Such formed electrical interconnects 40preferably comprise conductive traces. The conductive traces cancomprise aluminum or other conductive materials. The conductive tracesare formed by sputtering in one fabrication method.

[0034] Electrical interconnects 40, 41 can comprise other conductors inother embodiments. Electrical interconnects 40, 41 electrically coupleindividual temperature sensing devices 30 with edge 22 of electronicdevice workpiece 10.

[0035] An isolator (not shown in FIG. 1) is provided intermediate uppersurface 20 and temperature sensing devices 30 and electricalinterconnects 40, 41. The isolator comprises silicon dioxide or othersuitable insulative material.

[0036] Interface connection 18 is provided in electrical connection withelectrical interconnects 40, 41. The depicted interface connection 18 islocated proximate to edge 22 of electronic device workpiece 10.Interface connection 18 is configured to provide electrical coupling ofelectrical interconnects 40, 41 and the respective temperature sensingdevices 30 with circuitry 12 external of electronic device workpiece 10.Exemplary interface connection configurations include tab tape, adapter,flip chip connections, wire bond connections, and conductive adhesives.Interface connection 18 can include other configurations in accordancewith the present invention.

[0037] Referring to FIG. 1A, an alternative interface connection 18 a isillustrated. Connection 18 a provides electrical coupling of temperaturesensing devices 30 with electrical circuitry 12. The depicted interfaceconnection 18 a is defined by edge 24 of workpiece 10.

[0038] Referring to FIG. 1B, yet another interface connection 18 b isillustrated. The depicted interface connection 18 b comprises respectivemating plug and receptacle components 13, 15. Plug component 13 iscoupled with wires 14 of external circuitry 12 (although three wires 14are shown in FIG. 1B, additonal wires of circuitry 12 can be coupledwith plug 13). Plug 13 is configured for removable coupling withcomponent 15.

[0039] Receptacle component 15 is configured to receive plug 13 and forattachment to electrical interconnections 40, 41 (only oneinterconnection 40 is shown in FIG. 1B). When mated, components 13, 15couple external circuitry 12 with respective interconnections 40, 41.

[0040] A plurality of interconnects 7 are used in the depictedembodiment to couple internal electrical connections 17 of components13, 15 with interconnections 40, 41. Exemplary interconnects 7 includesolder, solder balls, conductive epoxy, etc.

[0041] Referring to FIG. 2, electronic device workpiece 10 includes acavity 50 formed within substrate 11. Cavity 50 includes plural slopingsidewalls 52, 53 and a bottom wall 54. Surface 20 of substrate 11includes sidewalls 52, 53, and bottom wall 54. An exemplary cavity 50has a depth of approximately 200 microns and bottom wall 54 has a widthof approximately 300 microns.

[0042] Cavity 50 is preferably formed by an anisotropic etch. Anexemplary anisotropic etch includes potassium hydroxide (KOH).Utilization of an anisotropic etch provides sloping sidewalls 52, 53within cavity 50. Provision of sloping sidewalls 52, 53 facilitatesfabrication of conductors 40, 41 over surface 20 and isolator 56, andsidewalls 52, 53 of cavity 50. Sidewalls 52, 53 are preferably sloped atan angle within the approximate range of 50 to 60 degrees with respectto upper surface 20 of substrate 11. The most preferred embodimentprovides sidewalls 52, 53 having an angle of 54 degrees with respect toupper surface 20.

[0043] Cavity 50 is formed by an isotropic etch in an alternativeembodiment. Wire bonded connections are preferably utilized in such anembodiment to provide electrical coupling of interconnects 40, 41 uponsurface 20 with the temperature sensing device 30 provided within cavity50.

[0044] One temperature sensing device 30 is shown borne by substrate 11of electronic device workpiece 10. An isolation layer 56 is shown overelectronic device workpiece 10. Isolator 56 is formed over upper surface20 of substrate 11 including sidewalls 52, 53 and bottom wall 54 ofcavity 50.

[0045] A preexisting temperature sensing device 30 is positioned andadhered within cavity 50 in the depicted embodiment of FIG. 2.Temperature sensing device 30 is adhered using standard thermalconductive epoxies or adhesives in one embodiment. A temperature sensingdevice is formed within cavity 50 in other embodiments described below.Bottom wall 54 supports temperature sensing device 30 in the depictedembodiment. Temperature sensing device 30 is supported by upper surface20 of substrate 11 in other embodiments.

[0046] Electric interconnects or conductive traces 40, 41 are formedover upper surface 20 and sidewall 52 in the depicted embodiment (onlyconductive trace 40 is shown in FIG. 2). The illustrated electricalinterconnect 40 is provided over a portion of bottom wall 54. Anadditional electrical connection 58 is utilized to electrically coupletemperature sensing device 30 with conductive trace or electricalinterconnect 40. In one embodiment, electrical connection 58 comprises awire connection, such as that formed by wire bonding. Other forms ofconnections such as tab tape and flip chip connections can also beemployed. Connection 58 is preferably encapsulated to minimize damage toconnection 58. A dispensed epoxy 57 is utilized in one embodiment toencapsulate connection 58. As shown, it is preferred to leave a portionof the area adjacent temperature sensing device 30 free of epoxy foraccurate temperature sensing.

[0047] In other embodiments, contacting of conductive trace 40 withtemperature sensing device 30 is sufficient to electrically couple trace40 and temperature sensing device 30.

[0048] Referring to FIG. 2A, the illustrated electrical interconnection40 is formed outside of cavity 50. Connection 58 is used to coupletemperature sensing device 30 with the depicted interconnection 40 at alocation upon interconnection 40 outside of cavity 50.

[0049] Temperature sensing device 30 is preferably provided uponelectronic device workpiece 10 in a temperature sensing relation withrespect to electronic device workpiece 10. Temperature sensing device 30is configured to sense the temperature of an area of electronic deviceworkpiece 10 immediately adjacent the attached device 30. In oneembodiment, the resistance of temperature sensing device 30 changescorresponding to changes in temperature. Such changes in resistancechange the voltage drop across temperature sensing device 30 therebychanging signals (for example the currents of the signals) passingthrough temperature sensing device 30. The generated signals correspondto the temperature of the area of the electronic device workpiece 10being sensed. Electrical interconnects 40, 41 conduct the generatedsignals to interface connection 18 and external circuitry 12 in thepreferred embodiment. Exemplary external circuitry 12 contains devicesthat convert the received signals to localized temperatures at specificpoints.

[0050] Referring to FIGS. 3 and 4, like reference numerals as usedherein refer to like components with any significant differencestherebetween represented by an alphabetical suffix such as “a”. Atemperature sensing device 30 a is shown formed within cavity 50 ofsubstrate 11. Electronic device workpiece 10 includes a conductive trace40 extending upon isolator 56 over a portion of upper surface 20, downsidewall 52 and across bottom wall 54 of cavity 50. Another conductivetrace 41 is coupled with temperature sensing device 30 a as shown inFIG. 4.

[0051] Temperature sensing device 30 a is shown formed within cavity 50upon conductor 40. The illustrated temperature sensing device 30 a is aresistance temperature device. The resistance temperature devicecomprises a conductive material such as polysilicon or metals such asplatinum. Other materials can also be utilized. Similarly, a combinationof metals and polysilicon can also be utilized. In a preferredembodiment, temperature sensing device 30 a comprises polysilicondeposited by chemical vapor deposition (CVD). The deposited polysiliconcan thereafter be doped by ion implantation or diffusion to provide adesired resistivity. Alternatively, doped polysilicon using PECVDtechniques can also be deposited. The polysilicon resistance temperaturedevice can thereafter be patterned such as by etching. Electricalinterconnect 40 and temperature sensing devices 30 can be formed withthin film processing techniques or thick film techniques using astencil.

[0052] Referring to FIG. 4, the illustrated RTD temperature sensingdevice 30 a comprises polysilicon patterned in an exemplary serpentineconfiguration. Temperature sensing device 30 a can be configured inother shapes and formats in other embodiments. Temperature sensingdevice 30 a is formed upon bottom wall 54 of cavity 50. Opposing ends oftemperature sensing device 30 a are individually coupled with pluralelectrical interconnects 40, 41. An electrical signal entering via oneof electrical interconnects 40, 41 passes through temperature sensingdevice 30 a and exits through the opposite electrical interconnect. Achange of temperature at bottom wall 54 results in a change inresistance of temperature sensing device 30 a. Accordingly, the voltagedrop across temperature sensing device 30 a changes with respect tofluctuations in temperature of the area of electronic device workpiece10 adjacent device 30 a. Electronic interconnects 40, 41 are configuredto conduct electrical signals which indicate a temperature of electronicdevice workpiece 10.

[0053] Providing temperature sensing devices within cavities of theelectronic device workpiece enables temperature mapping of the workpiecein three dimensions. Temperature sensing devices can be provided both onthe surfaces of an electronic device workpiece and within cavitiesformed within the workpiece. Temperature sensing devices upon one orboth surfaces of the electronic device workpiece enable temperaturemapping in x-y directions upon the respective surfaces of the workpiece.Providing temperature sensing devices within cavities of the workpieceenable temperature sensing within the z direction intermediate thesurfaces of the workpiece.

[0054] Referring to FIG. 5, temperature sensing device 30 a is formedover surface 20 of substrate 11 of electronic device workpiece 10 andisolator layer 56. In the depicted embodiment, at least a portion oftemperature sensing device 30 a is formed or positioned upon electricalinterconnect 40. In the depicted embodiment, temperature sensing device30 a is formed by chemical vapor deposition (CVD). In other embodiments,temperature sensing device 30 a is formed by alternative processingmethods. Isolator layer 56 is provided intermediate electricalinterconnect 40 and upper surface 20 of substrate 11.

[0055] Referring to FIG. 6, another construction for providingelectrical connection with temperature sensing device 30 a is shown.Upper surface 20 and lower surface 22 of substrate 11 are shown in FIG.6. Electrical interconnect 40 is formed upon upper surface 20 aspreviously described.

[0056] The illustrated electronic device workpiece 10 also includes avia 44 formed within substrate 11. Via 44 enables electrical connectionof upper surface 20 with lower surface 22. In particular, anotherelectrical interconnection 42 is formed upon lower surface 22 ofsubstrate 11. Via 44 is also plugged with a conductive material formingelectrical interconnection 45 providing coupling of interconnections 40,42. An insulating layer 56 a is preferably formed within via 44 toprovide insulation of interconnection 45.

[0057] Electrical interconnection 42 comprises a pad in the illustratedconfiguration. Alternatively, electrical connection 42 can be formed toextend to an edge of electronic device workpiece 10. Electricalinterconnection 42 can be coupled with external circuitry (not shown inFIG. 6) enabling monitoring of temperatures of electronic deviceworkpiece 10.

[0058] In some embodiments, the described electronic device workpiece isconfigured and utilized as a calibration wafer. Such calibration wafersare typically placed within a workpiece processing chamber and thechamber can be brought up to subject processing conditions at typicalelevated temperatures. Through the use of an electronic device workpiececonfigured as a calibration wafer, the temperature at various positionsupon electronic device workpieces to be processed can be determined.Thereafter, data provided by temperature sensing devices located uponthe electronic device workpiece can be utilized to provide temperaturecontrol and modify some aspect of the processing chamber.

[0059] The processing chamber is preferably modified to provide auniform temperature distribution across the entire surface of theelectronic device workpiece being processed. In other processes, theprocessing chamber is modified to provide varied temperatures across asurface of the workpiece.

[0060] The modifications can be made with the calibration workpiece inplace within the processing chamber. The effect of such modificationscan be verified by the temperature sensing devices and associatedtemperature monitoring equipment coupled with the devices. Thereafter,the calibration workpiece is removed and the equipment having beendesirably calibrated can be utilized to process other electronic deviceworkpieces in mass.

[0061] In another embodiment, temperature sensing devices are providedupon an electronic device workpiece which will actually be processed andsubsequently utilized to fabricate integrated circuitry or othercomponents. The temperature sensing devices can be fabricated upon theelectronic device workpiece during the fabrication of the electronicdevice workpiece. In another embodiment, preexisting or prefabricatedtemperature sensing devices are positioned and adhered upon theelectronic device workpiece.

[0062] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. An electronic device workpiece comprising: a substrate having asurface; a temperature sensing device borne by the substrate; and anelectrical interconnect provided upon the surface of the substrate, theelectrical interconnect being electrically coupled with the temperaturesensing device.
 2. The electronic device workpiece according to claim 1further comprising a wire connection adapted to electrically connect theelectrical interconnect and the temperature sensing device.
 3. Theelectronic device workpiece according to claim 1 wherein the electricalinterconnect contacts the temperature sensing device.
 4. The electronicdevice workpiece according to claim 1 wherein the workpiece has an edgeand the electrical interconnect extends from the temperature sensingdevice to the edge of the electronic device workpiece.
 5. The electronicdevice workpiece according to claim 1 further comprising a cavityincluding plural sloped sidewalls and a bottom wall within thesubstrate, the temperature sensing device being provided within thecavity.
 6. The electronic device workpiece according to claim 5 whereinthe sidewalls are sloped at an angle within the approximate range offifty to sixty degrees with respect to the surface of the substrate. 7.The electronic device workpiece according to claim 1 further comprisingan isolator intermediate the surface of the electronic device workpieceand individual ones of the electrical interconnect and the temperaturesensing device.
 8. The electronic device workpiece according to claim 1further comprising an interface connection in electrical connection withthe electrical interconnect, the interface connection being configuredto provide electrical coupling of the electrical interconnect and thetemperature sensing device with circuitry external of the electronicdevice workpiece.
 9. The electronic device workpiece according to claim1 wherein the electrical interconnect comprises a conductive trace. 10.The electronic device workpiece according to claim 1 wherein thetemperature sensing device comprises a resistance temperature device.11. The electronic device workpiece according to claim 1 wherein thesubstrate includes a via and a conductor within the via configured toelectrically couple with the electrical interconnect.
 12. The electronicdevice workpiece according to claim 1 further comprising pluraladditional temperature sensing devices borne by the substrate.
 13. Theelectronic device workpiece according to claim 1 wherein the electronicdevice workpiece comprises a calibration workpiece.
 14. The electronicdevice workpiece according to claim 1 wherein the substrate comprises asemiconductive substrate.
 15. The electronic device workpiece accordingto claim 1 wherein the substrate comprises silicon.
 16. The electronicdevice workpiece according to claim 1 wherein the substrate comprisessilicon carbide.
 17. The electronic device workpiece according to claim1 wherein the substrate comprises gallium nitride.
 18. An electronicdevice workpiece comprising: a substrate having a surface; a cavityformed in the substrate, the cavity having sidewalls sloped at an anglewithin an approximate range of fifty to sixty degrees with respect tothe surface of the substrate; a temperature sensing device within thecavity of the substrate; and an electrical interconnect coupled with thetemperature sensing device.
 19. The electronic device workpieceaccording to claim 18 wherein the electrical interconnect is formed uponthe surface of the substrate.
 20. The electronic device workpieceaccording to claim 18 further comprising a wire connection electricallyconnecting the electrical interconnect and the temperature sensingdevice.
 21. The electronic device workpiece according to claim 18wherein the electrical interconnect contacts the temperature sensingdevice.
 22. The electronic device workpiece according to claim 18wherein the workpiece has an edge and the electrical interconnectextends from the temperature sensing device to the edge of theelectronic device workpiece.
 23. The electronic device workpieceaccording to claim 18 wherein the sidewalls are sloped at approximatelyfifty-four degrees.
 24. The electronic device workpiece according toclaim 18 wherein the electronic device workpiece comprises asemiconductor wafer.
 25. The electronic device workpiece according toclaim 18 wherein the electronic device workpiece comprises a calibrationworkpiece.
 26. The electronic device workpiece according to claim 18wherein the electrical interconnect comprises a conductive trace. 27.The electronic device workpiece according to claim 18 wherein thetemperature sensing device comprises a resistance temperature device.28. A semiconductor workpiece comprising: a semiconductive substratehaving a surface; a temperature sensing device borne by the substrate;and an electrical interconnect provided upon the surface of thesubstrate, the electrical interconnect being electrically coupled withthe temperature sensing device.
 29. The semiconductor workpieceaccording to claim 28 further comprising a cavity including pluralsloped sidewalls and a bottom wall within the substrate, the temperaturesensing device being provided within the cavity.
 30. The semiconductorworkpiece according to claim 28 wherein the electrical interconnectcomprises a conductive trace.
 31. A semiconductor workpiece comprising:a substrate having a surface and an edge; a cavity formed in thesubstrate, the cavity having sidewalls sloped at an approximatefifty-four degree angle with respect to the surface of the substrate; aresistance temperature device within the cavity of the substrate; aplurality of conductive traces coupled with the resistance temperaturedevice, the conductive traces being formed upon the surface of thesubstrate to contact the resistance temperature device, the conductivetraces being configured to electrically couple the resistancetemperature device with the edge of the substrate; an isolatorintermediate the surface of the electronic device workpiece and theconductive traces and the resistance temperature device; and aninterface connection in electrical connection with the conductivetraces, the interface connection being configured to provide electricalcoupling of the resistance temperature device with circuitry external ofthe semiconductor workpiece.
 32. A method of sensing temperature of anelectronic device workpiece comprising: providing an electronic deviceworkpiece; supporting a temperature sensing device using the electronicdevice workpiece; providing an electrical interconnect upon a surface ofthe electronic device workpiece; electrically coupling the electricalinterconnect with the temperature sensing device; and sensingtemperature of the electronic device workpiece using the temperaturesensing device.
 33. The method according to claim 32 further comprisingwire bonding the electrical interconnect and the temperature sensingdevice.
 34. The method according to claim 32 further comprising: forminga cavity in the electronic device workpiece; and providing thetemperature sensing device within the cavity.
 35. The method accordingto claim 34 wherein the forming the cavity comprises anisotropicallyetching the electronic device workpiece.
 36. The method according toclaim 34 wherein the forming the cavity comprises isotropically etchingthe electronic device workpiece.
 37. The method according to claim 32further comprising forming the temperature sensing device.
 38. Themethod according to claim 37 wherein the forming the temperature sensingdevice comprises forming a resistance temperature device.
 39. The methodaccording to claim 32 further comprising electrically coupling theelectrical interconnect with external circuitry.
 40. The methodaccording to claim 32 further comprising electrically coupling thetemperature sensing device with an edge of the electronic deviceworkpiece using the electrical interconnect.
 41. The method according toclaim 32 wherein the providing the electrical interconnect comprisesforming a conductive trace.
 42. The method according to claim 32 furthercomprising contacting the electrical interconnect with the temperaturesensing device.
 43. The method according to claim 32 wherein the methodcomprises a method of sensing temperature of semiconductor wafers.
 44. Amethod of semiconductor processing, comprising: providing asemiconductor substrate; anisotropically etching a cavity in thesemiconductor substrate; and providing a temperature sensing devicewithin the cavity of the semiconductor substrate.
 45. The methodaccording to claim 44 further comprising: providing an electricalinterconnect upon a surface of the semiconductor substrate; andelectrically coupling the electrical interconnect with the temperaturesensing device.
 46. The method according to claim 45 wherein theproviding the electrical interconnect comprises forming a conductivetrace.
 47. The method according to claim 45 wherein the electricallycoupling comprises wire bonding the electrical interconnect and thetemperature sensing device.
 48. The method according to claim 45 whereinthe electrically coupling includes contacting the electricalinterconnect and the temperature sensing device.
 49. The methodaccording to claim 45 further comprising electrically coupling theelectrical interconnect with circuitry external to the semiconductorsubstrate.
 50. The method according to claim 45 further comprisingelectrically coupling the temperature sensing device with an edge of thesemiconductor substrate using the electrical interconnect.
 51. Themethod according to claim 44 wherein the providing comprises forming thetemperature sensing device within the cavity.
 52. The method accordingto claim 44 wherein the providing comprises positioning the temperaturesensing device within the cavity.
 53. A method of sensing temperature ofan electronic device workpiece comprising: providing an electronicdevice workpiece; forming a temperature sensing device upon theelectronic device workpiece, the forming including providing thetemperature sensing device in a temperature sensing relation with theelectronic device workpiece; and sensing the temperature of theelectronic device workpiece using the temperature sensing device. 54.The method according to claim 53 further comprising: providing anelectrical interconnect upon the electronic device workpiece; andelectrically coupling the electrical interconnect with the temperaturesensing device.
 55. The method according to claim 54 wherein theproviding the electrical interconnect comprises forming a conductivetrace.
 56. The method according to claim 54 wherein the electricallycoupling comprises wire bonding the electrical interconnect and thetemperature sensing device.
 57. The method according to claim 54 whereinthe electrically coupling includes contacting the electricalinterconnect and the temperature sensing device.
 58. The methodaccording to claim 53 further comprising: forming a cavity in theelectronic device workpiece; and providing the temperature sensingdevice within the cavity.
 59. The method according to claim 58 whereinthe forming the cavity comprises anisotropically etching the electronicdevice workpiece.
 60. The method according to claim 53 wherein theforming comprises forming a resistance temperature device.
 61. Themethod according to claim 53 further comprising forming pluraltemperature sensing devices upon the electronic device workpiece.
 62. Amethod of sensing temperature of an electronic device workpiececomprising: providing an electronic device workpiece; supporting atemperature sensing device using the electronic device workpiece;providing the temperature sensing device in a temperature sensingrelation with the electronic device workpiece; providing an electricalinterconnect upon a surface of the electronic device workpiece; andelectrically coupling the electrical interconnect with the temperaturesensing device.
 63. The method according to claim 62 wherein thecoupling comprises wire bonding the electrical interconnect and thetemperature sensing device.
 64. The method according to claim 62 whereinthe coupling comprises contacting the electrical interconnect with thetemperature sensing device.
 65. The method according to claim 62 furthercomprising: forming a cavity in the electronic device workpiece; andproviding the temperature sensing device within the cavity.
 66. Themethod according to claim 65 wherein the forming the cavity comprisesanisotropically etching the electronic device workpiece.
 67. The methodaccording to claim 62 further comprising forming a temperature sensingdevice upon the electronic device workpiece.
 68. The method according toclaim 62 further comprising electrically coupling the electricalinterconnect with circuitry external to the electronic device workpiece.69. The method according to claim 62 further comprising electricallycoupling the temperature sensing device with an edge of the electronicdevice workpiece using the electrical interconnect.
 70. The methodaccording to claim 62 wherein the providing the electrical interconnectcomprises forming a conductive trace.